STB100N10F7 MOSFET Transistor

The STB100N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB100N10F7 transistor as follows.

STB100N10F7 Transistor Specification

Transistor Code		STB100N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		100N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		823pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		61nC

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