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ST36N10D MOSFET Transistor

The ST36N10D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ST36N10D transistor as follows.

Circuit diagram symbol of the ST36N10D transistor

ST36N10D Transistor Specification

Transistor Code ST36N10D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 36A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.048Ohm
Power Dissipation (Maximum) PD 83W
Drain-Source Capacitance 270pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 61nC

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