SSW4N80A MOSFET Transistor

The SSW4N80A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSW4N80A transistor as follows.

SSW4N80A Transistor Specification

Transistor Code		SSW4N80A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		32nC

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