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SSU50N10 MOSFET Transistor

The SSU50N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSU50N10 transistor as follows.

Circuit diagram symbol of the SSU50N10 transistor

SSU50N10 Transistor Specification

Transistor Code SSU50N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 54A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 104W
Drain-Source Capacitance 268pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17.2nS

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