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SSR1N60A MOSFET Transistor

The SSR1N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSR1N60A transistor as follows.

Circuit diagram symbol of the SSR1N60A transistor

SSR1N60A Transistor Specification

Transistor Code SSR1N60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 0.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 12Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 145pF
Operating Junction Temperature (Maximum) 150°C

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