SSP7200N MOSFET Transistor

The SSP7200N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSP7200N transistor as follows.

SSP7200N Transistor Specification

Transistor Code		SSP7200N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP8PP
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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