SSP6N60 MOSFET Transistor

The SSP6N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSP6N60 transistor as follows.

SSP6N60 Transistor Specification

Transistor Code		SSP6N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		77nC

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