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SSP6N55 MOSFET Transistor

The SSP6N55 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSP6N55 transistor as follows.

Circuit diagram symbol of the SSP6N55 transistor

SSP6N55 Transistor Specification

Transistor Code SSP6N55
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 550V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 125W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 77nC

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