SSP4N60AS MOSFET Transistor

The SSP4N60AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSP4N60AS transistor as follows.

SSP4N60AS Transistor Specification

Transistor Code		SSP4N60AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		545pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		25nC

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