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SSN1N45BBU MOSFET Transistor

The SSN1N45BBU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSN1N45BBU transistor as follows.

Circuit diagram symbol of the SSN1N45BBU transistor

SSN1N45BBU Transistor Specification

Transistor Code SSN1N45BBU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Drain-Source Voltage (Maximum) VDS 450V
Gate-Source Voltage (Maximum) VGS 50V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.25Ohm
Power Dissipation (Maximum) PD 0.9W
Drain-Source Capacitance 29pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 3.7V
Total Gate Charge 6.5nC

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