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SSM75T10GS MOSFET Transistor

The SSM75T10GS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM75T10GS transistor as follows.

Circuit diagram symbol of the SSM75T10GS transistor

SSM75T10GS Transistor Specification

Transistor Code SSM75T10GS
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 72A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 138W
Drain-Source Capacitance 540pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 75nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 69nC

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