SSM75T10GP MOSFET Transistor

The SSM75T10GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM75T10GP transistor as follows.

SSM75T10GP Transistor Specification

Transistor Code		SSM75T10GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	138W
Drain-Source Capacitance		540pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		75nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		69nC

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