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SSM6J771G MOSFET Transistor

The SSM6J771G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM6J771G transistor as follows.

Circuit diagram symbol of the SSM6J771G transistor

SSM6J771G Transistor Specification

Transistor Code SSM6J771G
Transistor Type MOSFET
Control Channel Type P-Channel
Package WCSP6C
Transistor SMD Code PBA
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.031Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 9.8nC

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