SSM6J212FE MOSFET Transistor

The SSM6J212FE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM6J212FE transistor as follows.

SSM6J212FE Transistor Specification

Transistor Code		SSM6J212FE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT563_ES6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0407Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V

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