SSM60T03GJ MOSFET Transistor

The SSM60T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM60T03GJ transistor as follows.

SSM60T03GJ Transistor Specification

Transistor Code		SSM60T03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		57.5nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		11.6nC

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