SSM5G11TU MOSFET Transistor

The SSM5G11TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM5G11TU transistor as follows.

SSM5G11TU Transistor Specification

Transistor Code		SSM5G11TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		2-2R1A
Transistor SMD Code		KEV
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.226Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		32pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		2.9nC

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