SSM5G10TU MOSFET Transistor

The SSM5G10TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM5G10TU transistor as follows.

SSM5G10TU Transistor Specification

Transistor Code		SSM5G10TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		2-2R1A
Transistor SMD Code		KET
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.213Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		43pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.4nC

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