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SSM4800AGM MOSFET Transistor

The SSM4800AGM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM4800AGM transistor as follows.

Circuit diagram symbol of the SSM4800AGM transistor

SSM4800AGM Transistor Specification

Transistor Code SSM4800AGM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 9.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 7nC

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