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SSM3K56MFV MOSFET Transistor

The SSM3K56MFV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM3K56MFV transistor as follows.

SSM3K56MFV Transistor Specification

Transistor Code		SSM3K56MFV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VESM
Transistor SMD Code		NZ
Drain-Source Voltage (Maximum)	V_DS	20V
Gate-Source Voltage (Maximum)	V_GS	8V
Drain Current (Maximum)	I_D	0.8A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.235Ohm
Power Dissipation (Maximum)	P_D	0.15W
Drain-Source Capacitance		16pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1nC

SSM3K56MFV MOSFET Transistor Overview

The SSM3K56MFV is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a VESM package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SSM3K56MFV MOSFET

Followings are the key electrical characteristics of the SSM3K56MFV MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SSM3K56MFV MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the SSM3K56MFV MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SSM3K56MFV MOSFET transistor is 0.8A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SSM3K56MFV MOSFET transistor when the transistor is fully turned on is 0.235 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the SSM3K56MFV MOSFET transistor can comfortably transfer into heat without breaking is 0.15W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the SSM3K56MFV MOSFET transistor is 16pF. This value influences to the switching speed of the SSM3K56MFV MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the SSM3K56MFV MOSFET transistor is switched on is . This is the rate at which SSM3K56MFV MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SSM3K56MFV MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SSM3K56MFV MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SSM3K56MFV MOSFET transistor. You can download the official SSM3K56MFV MOSFET transistor datasheet to get more infromation about this transistor.

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