SSM2309GN MOSFET Transistor

The SSM2309GN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM2309GN transistor as follows.

SSM2309GN Transistor Specification

Transistor Code		SSM2309GN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23-3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	1.38W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		5nC

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