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SSM2305GN MOSFET Transistor

The SSM2305GN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM2305GN transistor as follows.

Circuit diagram symbol of the SSM2305GN transistor

SSM2305GN Transistor Specification

Transistor Code SSM2305GN
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23-3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.053Ohm
Power Dissipation (Maximum) PD 1.38W
Drain-Source Capacitance 167pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.6nS
Gate-Threshold Voltage (Maximum) 0.5V
Total Gate Charge 10.6nC

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