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SSM2304AGN MOSFET Transistor

The SSM2304AGN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM2304AGN transistor as follows.

Circuit diagram symbol of the SSM2304AGN transistor

SSM2304AGN Transistor Specification

Transistor Code SSM2304AGN
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23-3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.117Ohm
Power Dissipation (Maximum) PD 1.38W
Drain-Source Capacitance 62pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 3nC

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