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SSM2303GN MOSFET Transistor

The SSM2303GN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM2303GN transistor as follows.

Circuit diagram symbol of the SSM2303GN transistor

SSM2303GN Transistor Specification

Transistor Code SSM2303GN
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.24Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 130.4pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 1V
Total Gate Charge 6.2nC

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