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SSI6N70A MOSFET Transistor

The SSI6N70A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI6N70A transistor as follows.

Circuit diagram symbol of the SSI6N70A transistor

SSI6N70A Transistor Specification

Transistor Code SSI6N70A
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Drain-Source Voltage (Maximum) VDS 700V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 130W
Drain-Source Capacitance 920pF
Operating Junction Temperature (Maximum) 150°C

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