SSI4N90AS MOSFET Transistor

The SSI4N90AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI4N90AS transistor as follows.

SSI4N90AS Transistor Specification

Transistor Code		SSI4N90AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	900V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.7Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		910pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		42nC

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