SSI4N80AS MOSFET Transistor

The SSI4N80AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI4N80AS transistor as follows.

SSI4N80AS Transistor Specification

Transistor Code		SSI4N80AS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		880pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		40nC

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