SSI3N80A MOSFET Transistor

The SSI3N80A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI3N80A transistor as follows.

SSI3N80A Transistor Specification

Transistor Code		SSI3N80A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.8Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		585pF
Operating Junction Temperature (Maximum)		150°C

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