SSI1N60A MOSFET Transistor

The SSI1N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI1N60A transistor as follows.

SSI1N60A Transistor Specification

Transistor Code		SSI1N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	34W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C

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