SSI1N50A MOSFET Transistor

The SSI1N50A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI1N50A transistor as follows.

SSI1N50A Transistor Specification

Transistor Code		SSI1N50A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		11nC

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