SSH6N80 MOSFET Transistor

The SSH6N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSH6N80 transistor as follows.

SSH6N80 Transistor Specification

Transistor Code		SSH6N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.9Ohm
Power Dissipation (Maximum)	PD	170W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		150nC

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