SSF7NS65G MOSFET Transistor

The SSF7NS65G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF7NS65G transistor as follows.

SSF7NS65G Transistor Specification

Transistor Code		SSF7NS65G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.65Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		26.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS

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