SSF6N80G MOSFET Transistor

The SSF6N80G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF6N80G transistor as follows.

SSF6N80G Transistor Specification

Transistor Code		SSF6N80G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	69W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS

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