SSF6010G MOSFET Transistor

The SSF6010G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF6010G transistor as follows.

SSF6010G Transistor Specification

Transistor Code		SSF6010G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	64A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	91W
Drain-Source Capacitance		218pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		49nC

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