SSF5N60G MOSFET Transistor

The SSF5N60G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF5N60G transistor as follows.

SSF5N60G Transistor Specification

Transistor Code		SSF5N60G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.15Ohm
Power Dissipation (Maximum)	PD	126W
Drain-Source Capacitance		66.65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.8nS

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