SSF4N60G MOSFET Transistor

The SSF4N60G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF4N60G transistor as follows.

SSF4N60G Transistor Specification

Transistor Code		SSF4N60G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	77W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.7nS

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