SSF3611E MOSFET Transistor

The SSF3611E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF3611E transistor as follows.

SSF3611E Transistor Specification

Transistor Code		SSF3611E
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		459pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS
Total Gate Charge		55nC

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