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SSF2112H2 MOSFET Transistor

The SSF2112H2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF2112H2 transistor as follows.

Circuit diagram symbol of the SSF2112H2 transistor

SSF2112H2 Transistor Specification

Transistor Code SSF2112H2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSSOP8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0125Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 229pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.8nS

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