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SSF11NS60D MOSFET Transistor

The SSF11NS60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF11NS60D transistor as follows.

Circuit diagram symbol of the SSF11NS60D transistor

SSF11NS60D Transistor Specification

Transistor Code SSF11NS60D
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.41Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 78.06pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.45nS

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