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SSE90N06-10P MOSFET Transistor

The SSE90N06-10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSE90N06-10P transistor as follows.

Circuit diagram symbol of the SSE90N06-10P transistor

SSE90N06-10P Transistor Specification

Transistor Code SSE90N06-10P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220P
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0099Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 567pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 80nS

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