SRM7N65 MOSFET Transistor

The SRM7N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRM7N65 transistor as follows.

SRM7N65 Transistor Specification

Transistor Code		SRM7N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.22Ohm
Power Dissipation (Maximum)	PD	27W
Drain-Source Capacitance		112pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.9V

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