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SRM4N60U MOSFET Transistor

The SRM4N60U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRM4N60U transistor as follows.

Circuit diagram symbol of the SRM4N60U transistor

SRM4N60U Transistor Specification

Transistor Code SRM4N60U
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-126F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.41Ohm
Power Dissipation (Maximum) PD 10W
Drain-Source Capacitance 68pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3.9V

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