SRM4N60TF MOSFET Transistor

The SRM4N60TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRM4N60TF transistor as follows.

SRM4N60TF Transistor Specification

Transistor Code		SRM4N60TF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.41Ohm
Power Dissipation (Maximum)	PD	27.8W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.9V

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