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SRM2N60 MOSFET Transistor

The SRM2N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRM2N60 transistor as follows.

Circuit diagram symbol of the SRM2N60 transistor

SRM2N60 Transistor Specification

Transistor Code SRM2N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.42Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 59pF
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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