SRC4N65D1 MOSFET Transistor

The SRC4N65D1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRC4N65D1 transistor as follows.

SRC4N65D1 Transistor Specification

Transistor Code		SRC4N65D1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.935Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		298pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.8nS
Gate-Threshold Voltage (Maximum)		4.49V
Total Gate Charge		13.2nC

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