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SRADM1005 MOSFET Transistor

The SRADM1005 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRADM1005 transistor as follows.

Circuit diagram symbol of the SRADM1005 transistor

SRADM1005 Transistor Specification

Transistor Code SRADM1005
Transistor Type MOSFET
Control Channel Type N-Channel
Package SMD-0.5
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 42nC

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