SQS405ENW MOSFET Transistor

The SQS405ENW is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQS405ENW transistor as follows.

SQS405ENW Transistor Specification

Transistor Code		SQS405ENW
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK1212-8
Transistor SMD Code		Q022
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		840pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		29nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		49.8nC

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