SQP100P06-9M3L MOSFET Transistor

The SQP100P06-9M3L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQP100P06-9M3L transistor as follows.

SQP100P06-9M3L Transistor Specification

Transistor Code		SQP100P06-9M3L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0093Ohm
Power Dissipation (Maximum)	PD	187W
Drain-Source Capacitance		1030pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		198nC

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