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SQM35N30-97 MOSFET Transistor

The SQM35N30-97 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQM35N30-97 transistor as follows.

Circuit diagram symbol of the SQM35N30-97 transistor

SQM35N30-97 Transistor Specification

Transistor Code SQM35N30-97
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.097Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 320pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 86nC

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