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SQM120N10-09 MOSFET Transistor

The SQM120N10-09 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQM120N10-09 transistor as follows.

Circuit diagram symbol of the SQM120N10-09 transistor

SQM120N10-09 Transistor Specification

Transistor Code SQM120N10-09
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 635pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 120nC

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