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SQM110N04-04 MOSFET Transistor

The SQM110N04-04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQM110N04-04 transistor as follows.

Circuit diagram symbol of the SQM110N04-04 transistor

SQM110N04-04 Transistor Specification

Transistor Code SQM110N04-04
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 120A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 241W
Drain-Source Capacitance 1037pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 3.5V

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